Samsung said last month that it had begun producing chips based on the Gate-All-Around (GAA) transistor architecture and the 3-nanometer (nm) manufacturing node. The business revealed today at a gathering in Korea that the V1 line (EUV only) at Hwaseong Campus has begun shipping the first 3nm chip made using GAA Gate All Around technology.
According to the business, about 100 people attended the occasion, including Samsung Electronics CEO Kye Kyung-hyeon, Minister of Trade, Industry, and Energy Changyang Lee, suppliers, fabless, and executives and workers who engaged in 3nm GAA R&D and mass production.
Through mass production of the 3-nano GAA process and preventative foundry technology, along with the assurance that “we will go forward with revolutionary technology to become the best in the world,” Samsung Electronics’ Foundry Division seeks to increase its commercial competitiveness.
In the future, Samsung claimed, it will move the manufacture of 3-nano GAA chips to the Pyeongtaek Campus. In Q4 2022, TSMC is anticipated to begin producing 3nm chips.
Regarding the new milestone, Samsung Electronics’ DS division head Kye-hyung said:
Samsung Electronics has marked a milestone in the foundry business with this product mass production. Early development of GAA technology, which will be a new alternative when FinFET transistors reach their technological limits. It is an innovative result of creating something from nothing.
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